Energy-balance modelling of short channel single-GB thin-film transistors

Simulation Study of the Dependence of Submicron Polysilicon Thin-Film Transistor Output Characteristics on Grain Boundary Position

We investigate the impact of varying the grain boundary (GB) position on the output (Id–Vd) characteristics of submicron single GB polysilicon thin film transistors (TFTs), by two-dimensional (2D), drift-diffusion based, device simulation. We employ a localized GB trapping model with a distribution of both donor-like and acceptor-like trap states over the forbidden energy gap of the GB region. ...

Organic Thin Film Transistors with Polyvinylpyrrolidone / Nickel Oxide Sol-Gel Derived Nanocomposite Insulator

Polyvinylpyrrolidone  /  Nickel  oxide  (PVP/NiO)  dielectrics  were fabricated  with  sol-gel  method  using  0.2  g  of  PVP  at  different working  temperatures  of  80,  150  and  200  ºC.  Structural  properties and surface morphology of the hybrid films were investigated by X- Ray  diffraction  (XRD)  and  Scanning  Electron Microscope  (SEM) respectively. Energy dispersive X-ray spec...

Process Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays

Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed.  The p...

Influence of an anomalous dimension effect on thermal instability in amorphous- InGaZnO thin-film transistors

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Short-Channel Poly-Si Thin-Film Transistors with Ultrathin Channel